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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4052
DESCRIPTION With ITO-220 package Switching power transistor
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg
Collector-base voltage
Collector-emitter voltage

PARAMETER
Open emitter Open base
CHA IN
Collector current Base current Base current-Peak
Emitter-base voltage
E SEM NG
Open collector
DUC CON I
CONDITIONS
VALUE 600
TOR
7 3 6 1 2
UNIT V V V A A A A W ae ae
450
Collector current-Peak
Total power dissipation Junction temperature Storage temperature
TC=25ae
25 150 -55~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 5.0 UNIT ae /W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge ICEO IEBO hFE-1 hFE-2 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency At rated volatge IC=1.5A ; VCE=5V IC=1mA ; VCE=5V IC=0.3A ; VCE=10V 10 5 CONDITIONS IC=0.1A ;IB=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A MIN 450 TYP.
2SC4052
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO
MAX
UNIT V
1.0 1.5
V V
0.1
mA
0.1
mA
Switching times ton ts tf
Fall time

Turn-on time Storage time
INC
E SEM ANG H
OND IC
TOR UC
20 0.5 2.0 0.2
MHz
|I |I |I
s s s
IC=1.5A;IB1=0.3A IB2=0.6A ,RL=100| VBB2=4V
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC4052

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.20 mm)
3


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